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| SMD Type Transistors IC N-channel Enhancement Mode MOSFET 2SK3652 TO-263 + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance, low Qg High avalanche resistance For high-speed switching + .2 8 .7 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature * L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25 Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 50 200 2 200 3 100 150 -55 to +150 Unit V V A A mJ W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK3652 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode foward voltage Reverse recovery time Reverse recovery charge Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol VDSS Vth IDSS IGSS Testconditons ID = 1 mA, VGS = 0 VDS = 25 V, ID = 10 mA VDS = 184 V, VGS = 0 VGS = 30 V, VDS = 0 Min 230 2 Transistors IC Typ Max Unit V 4 100 1 29 40 V iA iA mU S pF pF pF ns ns ns ns RDS(on) VGS = 10 V, ID = 25 A Yfs Ciss Coss Crss td(on) tr td(off) tf VDSF trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VDD = 100 V, ID = 25 A,VGS = 10 V IDR = 50 A, VGS = 0 L = 230 iH, VDD = 100 V IDR = 25 A, di/dt = 100 A/is VDD = 100 V, ID = 25 A,RL = 4 U, VGS = 10 V VDS = 25 V, VGS = 0, f = 1 MHz VDS = 25 V, ID = 25 A 17 35 5 950 850 80 65 140 470 145 -1.5 235 1 180 105 40 14 1.25 41.6 V ns nC nC nC nC /W /W 2 www.kexin.com.cn |
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